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HSX111S高质量晶振,HELE加高晶振,X1C024000B81H-HV,6G移动通信晶振

频率:24MHZ

尺寸:1.6x1.2mm

HSX111S高质量晶振,HELE加高晶振,X1C024000B81H-HV,6G移动通信晶振,尺寸1.6x1.2mm,频率37.4MHZ,加高石英晶振,1612石英贴片晶振,水晶振动子,石英贴片晶振,无源贴片晶振,SMD晶振,石英晶体谐振器,四脚贴片晶振,6G移动通信晶振,小型设备晶振,测试测量晶振,平板电脑晶振,可穿戴设备晶振,网络设备晶振,无线应用晶振,高质量晶振,高性能晶振,低功耗晶振,低耗能晶振,具有良好的耐压性能。

晶振晶体产品很适合用于6G移动通信,小型设备,测试测量,平板电脑,可穿戴设备,网络设备,无线应用等领域.HSX111S高质量晶振,HELE加高晶振,X1C024000B81H-HV,6G移动通信晶振.

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1

HSX111S高质量晶振,HELE加高晶振,X1C024000B81H-HV,6G移动通信晶振,尺寸1.6x1.2mm,频率37.4MHZ,加高石英晶振,1612石英贴片晶振,水晶振动子,石英贴片晶振,无源贴片晶振,SMD晶振,石英晶体谐振器,四脚贴片晶振,6G移动通信晶振,小型设备晶振,测试测量晶振,平板电脑晶振,可穿戴设备晶振,网络设备晶振,无线应用晶振,高质量晶振,高性能晶振,低功耗晶振,低耗能晶振,具有良好的耐压性能。

晶振晶体产品很适合用于6G移动通信,小型设备,测试测量,平板电脑,可穿戴设备,网络设备,无线应用等领域.HSX111S高质量晶振,HELE加高晶振,X1C024000B81H-HV,6G移动通信晶振.

2

HSX111S高质量晶振,HELE加高晶振,X1C024000B81H-HV,6G移动通信晶振    参数表

Items parameter
Frequency Range 37.4MHZ 33~52MHZ 80MHZ,96MHZ
Mode Fundamental
Frequency Tolerance(at.25) ±7ppm ±10ppm
Load Capacitance 4pF Min. 7pF Min.
Drive Level 10µW(300µW Max.) 10µW(200µW Max.)
Equivalent Series Resistance 100 Ω Max. 50 Ω Max. 50 Ω Max.
Storage Temp.Range  -55°C ~ 125°C
3HSX111S高质量晶振,HELE加高晶振,X1C024000B81H-HV,6G移动通信晶振     尺寸

HSX111S

SMD晶体产品特性:

优异的老化特性

回流是可能的,符合RoHS标准且无铅

HSX111S 1

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编码 Series 品牌 描述 频率 频率稳定性
X2B026000M81H-HS HSX221SA HELE加高晶振 HSX221SA/26MHZ/8PF/7PPM/15PPM/-4 26.000MHZ ±15ppm
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