亚陶晶振PowerDI8080封装MOSFET提高了现代汽车应用中的功率密度,DMTH4M70SPGWQ,车载晶振
PowerDI ® 8080-5封装的PCB 占位面积为64mm 2，比TO263 (D2PAK) 封装格式占用的占位面积小40%。它还具有1.7mm 的板外轮廓，比 TO263低63%。芯片和端子之间的铜夹键合有助于实现 0.36°C/W 的低结壳热阻。这使 PowerDI ® 8080-5能够处理高达460A的电流，并提供比TO263封装高八倍的功率密度。
亚陶晶振PowerDI8080封装MOSFET提高了现代汽车应用中的功率密度,DMTH4M70SPGWQ,车载晶振
| Manufacturer Part Number原厂代码 | Manufacturer品牌 | Series型号 | Frequency 频率 | Frequency Stability频率稳定度 | Operating Temperature 工作温度 |
| FNETHE025 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 25MHz | ±25ppm | -20°C ~ 70°C |
| FNETHE025 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 25MHz | ±25ppm | -20°C ~ 70°C |
| FNETHE025 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 25MHz | ±25ppm | -20°C ~ 70°C |
| FNSURV027 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 27MHz | ±30ppm | -20°C ~ 70°C |
| FNSURV027 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 27MHz | ±30ppm | -20°C ~ 70°C |
| FNSURV027 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 27MHz | ±30ppm | -20°C ~ 70°C |
| FNGEPO002 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 2.048MHz | ±50ppm | -20°C ~ 70°C |
| FNGEPO002 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 2.048MHz | ±50ppm | -20°C ~ 70°C |
| FNGEPO002 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 2.048MHz | ±50ppm | -20°C ~ 70°C |
| FKSSD1025 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 25MHz | ±25ppm | -10°C ~ 70°C |
| FKSSD1025 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 25MHz | ±25ppm | -10°C ~ 70°C |
| FKSSD1025 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 25MHz | ±25ppm | -10°C ~ 70°C |
| UJWIFI026 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 26MHz | ±20ppm | -30°C ~ 85°C |
| UJWIFI026 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 26MHz | ±20ppm | -30°C ~ 85°C |
| UJWIFI026 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 26MHz | ±20ppm | -30°C ~ 85°C |
| FNEPON125 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 125MHz | ±50ppm | -20°C ~ 70°C |
| FNEPON125 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 125MHz | ±50ppm | -20°C ~ 70°C |
| FNEPON125 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 125MHz | ±50ppm | -20°C ~ 70°C |
| FK1330001Z | Diodes Incorporated | SaRonix-eCera™ FK | 13.3333MHz | ±25ppm | -40°C ~ 85°C |
| FK1330001Z | Diodes Incorporated | SaRonix-eCera™ FK | 13.3333MHz | ±25ppm | -40°C ~ 85°C |
| FK1330001Z | Diodes Incorporated | SaRonix-eCera™ FK | 13.3333MHz | ±25ppm | -40°C ~ 85°C |
| FJ2400011 | Diodes Incorporated | SaRonix-eCera™ FJ | 24MHz | ±50ppm | -40°C ~ 85°C |
| FJ2400011 | Diodes Incorporated | SaRonix-eCera™ FJ | 24MHz | ±50ppm | -40°C ~ 85°C |
| FJ2400011 | Diodes Incorporated | SaRonix-eCera™ FJ | 24MHz | ±50ppm | -40°C ~ 85°C |
亚陶晶振PowerDI8080封装MOSFET提高了现代汽车应用中的功率密度,DMTH4M70SPGWQ,车载晶振
亚陶晶振DMTH4M70SPGWQ符合AEC-Q101标准，具有PPAP功能，并在IATF 16949认证设施中制造。其鸥翼引线有助于光学检测 (AOI)，并提高温度循环可靠性。DMTH4M70SPGWQ，40V+175°C N 沟道增强模式MOSFET PowerDI8080-5，该MOSFET旨在满足汽车应用的严格要求。它符合AEC-Q101标准，由PPAP支持，非常适合用于: 发动机管理系统 车身控制电子设备DC-DC转换器。
特征：
额定温度为+175℃非常适合高环境温度环境，耐高温晶振
生产中的100%非钳位感应开关 (UIS) 测试—确保更可靠和更稳健的终端应用
高转换效率
低RDS(ON)——最大限度地减少功率损耗
改善光学检测的可湿性侧面
切换速度快
低输入电容
无铅表面处理；符合RoHS标准
不含卤素和锑。“绿色”设备
DMTH4M70SPGWQ适用于需要特定变更控制的汽车应用；该部件符合AEC-Q101标准，支持PPAP，并在IATF 16949认证设施中制造。
应用程序：
发动机管理系统
车身控制电子设备
DC-DC转换器
FJ2400002
Diodes Incorporated
SaRonix-eCera™ FJ
24MHz
±50ppm
-40°C ~ 85°C
FJ2400002
Diodes Incorporated
SaRonix-eCera™ FJ
24MHz
±50ppm
-40°C ~ 85°C
FJ2400002
Diodes Incorporated
SaRonix-eCera™ FJ
24MHz
±50ppm
-40°C ~ 85°C
FN2500149
Diodes Incorporated
SaRonix-eCera™ FN
25MHz
±50ppm
-40°C ~ 85°C
FN2500149
Diodes Incorporated
SaRonix-eCera™ FN
25MHz
±50ppm
-40°C ~ 85°C
FN2500149
Diodes Incorporated
SaRonix-eCera™ FN
25MHz
±50ppm
-40°C ~ 85°C
SXGPON155
Diodes Incorporated
SaRonix-eCera™ ASSP XO™
155.52MHz
±50ppm
-40°C ~ 85°C
SXGPON155
Diodes Incorporated
SaRonix-eCera™ ASSP XO™
155.52MHz
±50ppm
-40°C ~ 85°C
SXGPON155
Diodes Incorporated
SaRonix-eCera™ ASSP XO™
155.52MHz
±50ppm
-40°C ~ 85°C
HX2513F0026.000000
Diodes Incorporated
SaRonix-eCera™ HX
26MHz
±50ppm
-40°C ~ 105°C
HX2513F0026.000000
Diodes Incorporated
SaRonix-eCera™ HX
26MHz
±50ppm
-40°C ~ 105°C
HX2513F0026.000000
Diodes Incorporated
SaRonix-eCera™ HX
26MHz
±50ppm
-40°C ~ 105°C
HX3125006Q
Diodes Incorporated
SaRonix-eCera™ HX
25MHz
±30ppm
-40°C ~ 105°C
HX3125006Q
Diodes Incorporated
SaRonix-eCera™ HX
25MHz
±30ppm
-40°C ~ 105°C
HX3125006Q
Diodes Incorporated
SaRonix-eCera™ HX
25MHz
±30ppm
-40°C ~ 105°C
NX3211C0125.000000
Diodes Incorporated
SaRonix-eCera™ NX
125MHz
±50ppm
-20°C ~ 70°C
NX3211C0125.000000
Diodes Incorporated
SaRonix-eCera™ NX
125MHz
±50ppm
-20°C ~ 70°C
NX3211C0125.000000
Diodes Incorporated
SaRonix-eCera™ NX
125MHz
±50ppm
-20°C ~ 70°C
FJ1600002
Diodes Incorporated
SaRonix-eCera™ FJ
16MHz
±50ppm
-20°C ~ 70°C
FJ1600002
Diodes Incorporated
SaRonix-eCera™ FJ
16MHz
±50ppm
-20°C ~ 70°C
FJ1600002
Diodes Incorporated
SaRonix-eCera™ FJ
16MHz
±50ppm
-20°C ~ 70°C
JX7011D0070.656000
Diodes Incorporated
SaRonix-eCera™ JX
70.656MHz
±25ppm
-40°C ~ 85°C
JX7011D0070.656000
Diodes Incorporated
SaRonix-eCera™ JX
70.656MHz
±25ppm
-40°C ~ 85°C
JX7011D0070.656000
Diodes Incorporated
SaRonix-eCera™ JX
70.656MHz
±25ppm
-40°C ~ 85°C
UJ2600007Z
Diodes Incorporated
SaRonix-eCera™ UJ
26MHz
±20ppm
-20°C ~ 70°C
亚陶晶振PowerDI8080封装MOSFET提高了现代汽车应用中的功率密度,DMTH4M70SPGWQ,车载晶振
Product Parameters
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Q on request)" style="box-sizing:inherit">Automotive |
| Polarity | N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 40 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TC = +25°C (A) | 460 A |
| PD @TA = +25°C (W) | 5.6 W |
| PD @TC = +25°C (W) | 428 W |
| RDS(ON)Max @ VGS(10V)(mΩ) | 0.7 mΩ |
| |VGS(TH)| Min (V) | 2 V |
| |VGS(TH)| Max (V) | 4 V |
| QG Typ @ |VGS| = 10V (nC) | 117.1 nC |
| CISS Typ (pF) | 10053 pF |
| CISS Condition @|VDS| (V) | 20 V |
| UJ2600007Z | Diodes Incorporated | SaRonix-eCera™ UJ | 26MHz | ±20ppm | -20°C ~ 70°C |
| UJ2600007Z | Diodes Incorporated | SaRonix-eCera™ UJ | 26MHz | ±20ppm | -20°C ~ 70°C |
| FJ1120001Z | Diodes Incorporated | SaRonix-eCera™ FJ | 11.2896MHz | ±25ppm | -40°C ~ 85°C |
| FJ1120001Z | Diodes Incorporated | SaRonix-eCera™ FJ | 11.2896MHz | ±25ppm | -40°C ~ 85°C |
| FJ1120001Z | Diodes Incorporated | SaRonix-eCera™ FJ | 11.2896MHz | ±25ppm | -40°C ~ 85°C |
| FDC500026 | Diodes Incorporated | SaRonix-eCera™ FD | 125MHz | ±50ppm | -20°C ~ 70°C |
| FDC500026 | Diodes Incorporated | SaRonix-eCera™ FD | 125MHz | ±50ppm | -20°C ~ 70°C |
| FDC500026 | Diodes Incorporated | SaRonix-eCera™ FD | 125MHz | ±50ppm | -20°C ~ 70°C |
| HX7011C0025.000000 | Diodes Incorporated | SaRonix-eCera™ HX | 25MHz | ±25ppm | -40°C ~ 105°C |
| HX7011C0025.000000 | Diodes Incorporated | SaRonix-eCera™ HX | 25MHz | ±25ppm | -40°C ~ 105°C |
| HX7011C0025.000000 | Diodes Incorporated | SaRonix-eCera™ HX | 25MHz | ±25ppm | -40°C ~ 105°C |
| NX5011B0125.000000 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±25ppm | -20°C ~ 70°C |
| NX5011B0125.000000 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±25ppm | -20°C ~ 70°C |
| NX5011B0125.000000 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±25ppm | -20°C ~ 70°C |
| FNA000088Z | Diodes Incorporated | SaRonix-eCera™ FN | 100MHz | ±50ppm | -40°C ~ 85°C |
| FNA000088Z | Diodes Incorporated | SaRonix-eCera™ FN | 100MHz | ±50ppm | -40°C ~ 85°C |
| FNA000088Z | Diodes Incorporated | SaRonix-eCera™ FN | 100MHz | ±50ppm | -40°C ~ 85°C |
| FNA000065 | Diodes Incorporated | SaRonix-eCera™ FN | 100MHz | ±25ppm | -20°C ~ 70°C |
| FNA000065 | Diodes Incorporated | SaRonix-eCera™ FN | 100MHz | ±25ppm | -20°C ~ 70°C |
| FNA000065 | Diodes Incorporated | SaRonix-eCera™ FN | 100MHz | ±25ppm | -20°C ~ 70°C |
| NX71C50003 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±25ppm | -40°C ~ 85°C |
| NX71C50003 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±25ppm | -40°C ~ 85°C |
| NX71C50003 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±25ppm | -40°C ~ 85°C |
| FNC500131 | Diodes Incorporated | SaRonix-eCera™ FN | 125MHz | ±50ppm | -40°C ~ 85°C |
| FNC500131 | Diodes Incorporated | SaRonix-eCera™ FN | 125MHz | ±50ppm | -40°C ~ 85°C |
亚陶晶振PowerDI8080封装MOSFET提高了现代汽车应用中的功率密度,DMTH4M70SPGWQ,车载晶振
Diodes的优势：
行业领先的品质因数 低RDS(on)和Qg将功耗降至最低，并且开关损耗，提高效率
低Rthjc 0.35℃/W rth JC支持最高460A的漏极电流
64mm2的PCB尺寸 PowerDI8080-5仅占TO263电路板的40%面积，有利于更高的功率密度设计
低封装电感 夹片设计降低了寄生电感，改善了电磁干扰 表演
镀锡鸥翼引线 通过使用AOI实现目视检查，并提高高温循环可靠性，耐高温晶振
应用程序：高功率DC-DC转换器，电动汽车充电系统，大功率BLDC电机控制
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