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DIODES Crystal vibration company profile

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浏览:- 发布日期:2024-03-12 10:24:58【
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diodes历史1

Diodes Incorporated (Nasdaq: DIOD), a Standard and Poor's Smallcap 600 and Russell 3000 Index company, is a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets. Diodes serves the automotive, industrial, computing, consumer electronics, and communications markets.
Our diverse product portfolio covers diodes; rectifiers; transistors; MOSFETs; SiC diodes and MOSFETs; protection devices; logic; voltage translators; amplifiers and comparators; sensors; and power management devices such as AC-DC converters, DC-DC switching, linear voltage regulators, voltage references, LED drivers, power switches, and voltage supervisors. We also have timing and connectivity solutions including clock ICs, crystal oscillators, PCIe packet switches, multi-protocol switches, interface products, and signal integrity solutions for high-speed signals.
Diodes’ corporate headquarters and Americas’ sales offices are located in Plano, Texas, and Milpitas, California. Design, marketing, and engineering centers are located in Plano, Milpitas, U.S.; Taipei, Taoyuan City, Zhubei City, Taiwan; Shanghai, Yangzhou, China; Oldham, England; and Neuhaus, Germany. Diodes’ wafer fabrication facilities are located in South Portland, Maine, U.S., Oldham, Greenock, UK; Shanghai and Wuxi, China; and Keelung and Hsinchu, Taiwan. Diodes has assembly and test facilities located in Shanghai, Chengdu, and Wuxi, China; Neuhaus, Germany; and Jhongli and Keelung, Taiwan. Additional engineering, sales, warehouse, and logistics offices are located in Taipei, Taiwan; Hong Kong; Oldham, UK; Shanghai, Shenzhen, Wuhan, and Yangzhou, China; Seongnam-si, South Korea; and Munich, Frankfurt, Germany; with support offices throughout the world.车载晶振
The company’s manufacturing facilities have achieved certifications in the internationally recognized standards of ISO 9001:2015, ISO 14001:2015, and, for automotive products, IATF 16949:2016.
Diodes Incorporated is also C-TPAT certified. 
These Quality Awards reflect the superior quality-control techniques established at Diodes Incorporated and further enhance our credibility as a vendor-of-choice to OEMs increasingly concerned with quality and consistency.
Our market focus is on high-growth, end-user applications in the following segments:
Automotive: connected driving, comfort/style/safety, and electrification/powertrain 
Industrial: embedded systems, precision controls, and IIoT
Computing: cloud computing including server, storage, and data center applications
Consumer Electronics: IoT, wearables, home automation, and smart infrastructure
Communications: smart phones, 5G networks, advanced protocols, and charging solutions

diodes历史2

DIODES原厂代码 生产商品牌 型号 类型 频率 输出 电压 频率稳定度 工作温度
FK1330001Z Diodes晶振 FK XO 13.3333MHz LVCMOS 3.3V ±25ppm -40°C ~ 85°C
FK1330001Z Diodes晶振 FK XO 13.3333MHz LVCMOS 3.3V ±25ppm -40°C ~ 85°C
FK1330001Z Diodes晶振 FK XO 13.3333MHz LVCMOS 3.3V ±25ppm -40°C ~ 85°C
FJ2400011 Diodes晶振 FJ XO 24MHz LVCMOS 3.3V ±50ppm -40°C ~ 85°C
FJ2400011 Diodes晶振 FJ XO 24MHz LVCMOS 3.3V ±50ppm -40°C ~ 85°C
FJ2400011 Diodes晶振 FJ XO 24MHz LVCMOS 3.3V ±50ppm -40°C ~ 85°C
FJ2400002 Diodes晶振 FJ XO 24MHz LVCMOS 1.8V ±50ppm -40°C ~ 85°C
FJ2400002 Diodes晶振 FJ XO 24MHz LVCMOS 1.8V ±50ppm -40°C ~ 85°C
FJ2400002 Diodes晶振 FJ XO 24MHz LVCMOS 1.8V ±50ppm -40°C ~ 85°C
FJ1600002 Diodes晶振 FJ XO 16MHz LVCMOS 3.3V ±50ppm -20°C ~ 70°C
FJ1600002 Diodes晶振 FJ XO 16MHz LVCMOS 3.3V ±50ppm -20°C ~ 70°C
FJ1600002 Diodes晶振 FJ XO 16MHz LVCMOS 3.3V ±50ppm -20°C ~ 70°C
FJ1120001Z Diodes晶振 FJ XO 11.2896MHz LVCMOS 3.3V ±25ppm -40°C ~ 85°C
FJ1120001Z Diodes晶振 FJ XO 11.2896MHz LVCMOS 3.3V ±25ppm -40°C ~ 85°C
FJ1120001Z Diodes晶振 FJ XO 11.2896MHz LVCMOS 3.3V ±25ppm -40°C ~ 85°C
FM3900001Z Diodes晶振 FM XO 39.0625MHz LVCMOS 3.3V ±50ppm -40°C ~ 85°C
FM3900001Z Diodes晶振 FM XO 39.0625MHz LVCMOS 3.3V ±50ppm -40°C ~ 85°C
FM3900001Z Diodes晶振 FM XO 39.0625MHz LVCMOS 3.3V ±50ppm -40°C ~ 85°C
FKA000018Z Diodes晶振 FK XO 100MHz LVCMOS 1.8V ±50ppm -40°C ~ 85°C
FKA000018Z Diodes晶振 FK XO 100MHz LVCMOS 1.8V ±50ppm -40°C ~ 85°C
FKA000018Z Diodes晶振 FK XO 100MHz LVCMOS 1.8V ±50ppm -40°C ~ 85°C
FK2400017 Diodes晶振 FK XO 24MHz LVCMOS 3.3V ±25ppm -40°C ~ 85°C
FK2400017 Diodes晶振 FK XO 24MHz LVCMOS 3.3V ±25ppm -40°C ~ 85°C
FK2400017 Diodes晶振 FK XO 24MHz LVCMOS 3.3V ±25ppm -40°C ~ 85°C
FK2450016 Diodes晶振 FK XO 24.576MHz LVCMOS 1.8V ±25ppm -20°C ~ 70°C
FK2450016 Diodes晶振 FK XO 24.576MHz LVCMOS 1.8V ±25ppm -20°C ~ 70°C
FK2450016 Diodes晶振 FK XO 24.576MHz LVCMOS 1.8V ±25ppm -20°C ~ 70°C
FK2500025 Diodes晶振 FK XO 25MHz LVCMOS 3.3V ±25ppm -40°C ~ 85°C
FK2500025 Diodes晶振 FK XO 25MHz LVCMOS 3.3V ±25ppm -40°C ~ 85°C
FK2500025 Diodes晶振 FK XO 25MHz LVCMOS 3.3V ±25ppm -40°C ~ 85°C
FK2500067 Diodes晶振 FK XO 25MHz LVCMOS 3.3V ±50ppm -40°C ~ 105°C
FK2500067 Diodes晶振 FK XO 25MHz LVCMOS 3.3V ±50ppm -40°C ~ 105°C
FK2500067 Diodes晶振 FK XO 25MHz LVCMOS 3.3V ±50ppm -40°C ~ 105°C
FK1220016Z Diodes晶振 FK XO 12.288MHz LVCMOS 1.8V ±50ppm -40°C ~ 85°C
FK1220016Z Diodes晶振 FK XO 12.288MHz LVCMOS 1.8V ±50ppm -40°C ~ 85°C
FK1220016Z Diodes晶振 FK XO 12.288MHz LVCMOS 1.8V ±50ppm -40°C ~ 85°C
FJ2500009 Diodes晶振 FJ XO 25MHz LVCMOS 3.3V ±25ppm -40°C ~ 85°C
FJ2500009 Diodes晶振 FJ XO 25MHz LVCMOS 3.3V ±25ppm -40°C ~ 85°C
FJ2500009 Diodes晶振 FJ XO 25MHz LVCMOS 3.3V ±25ppm -40°C ~ 85°C
FJ2500036Z Diodes晶振 FJ XO 25MHz LVCMOS 1.8V ±25ppm -20°C ~ 70°C
FJ2500036Z Diodes晶振 FJ XO 25MHz LVCMOS 1.8V ±25ppm -20°C ~ 70°C
FJ2500036Z Diodes晶振 FJ XO 25MHz LVCMOS 1.8V ±25ppm -20°C ~ 70°C
FK2500021 Diodes晶振 FK XO 25MHz CMOS 1.8V ±50ppm -40°C ~ 85°C
FK0800003 Diodes晶振 FK XO 8MHz CMOS 3.3V ±50ppm -20°C ~ 70°C
FK2500022 Diodes晶振 FK XO 25MHz CMOS 3.3V ±50ppm -40°C ~ 85°C
FK2500022 Diodes晶振 FK XO 25MHz LVCMOS 3.3V ±50ppm -40°C ~ 85°C
FK5000013 Diodes晶振 FK XO 50MHz CMOS 3.3V ±50ppm -40°C ~ 85°C
FK5000013 Diodes晶振 FK XO 50MHz LVCMOS 3.3V ±50ppm -40°C ~ 85°C
FK1200011 Diodes晶振 FK XO 12MHz CMOS 3.3V ±50ppm -40°C ~ 85°C
FK1200011 Diodes晶振 FK XO 12MHz LVCMOS 3.3V ±50ppm -40°C ~ 85°C
FK0100001 Diodes晶振 FK XO 1MHz CMOS 1.8V ±50ppm -20°C ~ 70°C
FK0100002 Diodes晶振 FK XO 1MHz CMOS 3.3V ±50ppm -20°C ~ 70°C
FK0180004 Diodes晶振 FK XO 1.843MHz CMOS 3.3V ±50ppm -20°C ~ 70°C
FK0180005 Diodes晶振 FK XO 1.843MHz CMOS 3.3V ±25ppm -20°C ~ 70°C
FK0180006 Diodes晶振 FK XO 1.843MHz CMOS 3.3V ±50ppm -40°C ~ 85°C
FK0200002 Diodes晶振 FK XO 2MHz CMOS 2.5V ±50ppm -20°C ~ 70°C
FK0360002 Diodes晶振 FK XO 3.686MHz CMOS 3.3V ±50ppm -20°C ~ 70°C
FK0360003 Diodes晶振 FK XO 3.686MHz CMOS 3.3V ±25ppm -20°C ~ 70°C
FK0360004 Diodes晶振 FK XO 3.686MHz CMOS 3.3V ±50ppm -40°C ~ 85°C
FK0400005 Diodes晶振 FK XO 4MHz CMOS 3.3V ±25ppm -20°C ~ 70°C
FK0400007 Diodes晶振 FK XO 4MHz CMOS 3.3V ±50ppm -40°C ~ 85°C
FK0500002 Diodes晶振 FK XO 5MHz CMOS 3.3V ±50ppm -40°C ~ 85°C
FK0530001 Diodes晶振 FK XO 5.33MHz CMOS 3.3V ±50ppm -40°C ~ 85°C
FK0610001 Diodes晶振 FK XO 6.14MHz CMOS 3.3V ±25ppm -20°C ~ 70°C
FK0670001 Diodes晶振 FK XO 6.758MHz CMOS 3.3V ±25ppm -20°C ~ 70°C
FK0800004 Diodes晶振 FK XO 8MHz CMOS 3.3V ±50ppm -40°C ~ 85°C
FK0810001 Diodes晶振 FK XO 8.192MHz CMOS 3.3V ±50ppm -20°C ~ 70°C
FK0810002 Diodes晶振 FK XO 8.192MHz CMOS 3.3V ±25ppm -20°C ~ 70°C
FK0810003 Diodes晶振 FK XO 8.192MHz CMOS 3.3V ±50ppm -40°C ~ 85°C
FK1000006 Diodes晶振 FK XO 10MHz CMOS 3.3V ±50ppm -20°C ~ 70°C
FK1000007 Diodes晶振 FK XO 10MHz CMOS 3.3V ±25ppm -20°C ~ 70°C
FK1000008 Diodes晶振 FK XO 10MHz CMOS 3.3V ±50ppm -40°C ~ 85°C
FK1200010 Diodes晶振 FK XO 12MHz CMOS 3.3V ±50ppm -20°C ~ 70°C
FK1200013 Diodes晶振 FK XO 12MHz CMOS 3.3V ±25ppm -20°C ~ 70°C
FK1220006 Diodes晶振 FK XO 12.288MHz CMOS 1.8V ±25ppm -20°C ~ 70°C
FK1220007 Diodes晶振 FK XO 12.288MHz CMOS 3.3V ±50ppm -20°C ~ 70°C

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