美国Sitime晶振,SiT1418BA-21-18N -16.000000D,6G通信模块晶振,尺寸3.2x2.5mm,频率16MHZ,四脚贴片晶振,有源谐振器,有源晶振,SMD振荡器,带电压晶振,有源贴片晶振,3225mm有源晶振,低功耗有源谐振器,低相位有源谐振器,轻薄型谐振器,低相位有源谐振器,医疗专用晶振,航空电子晶振,汽车应用晶振,高温专用晶振,工业应用晶振,网络设备晶振,6G通信模块晶振。
XCalibur sit 1418有源谐振器是高温石英晶体谐振器的替代产品。作为一款有源MEMS器件,SiT1418消除了与晶体谐振器相关的问题,例如所有条件下的冷启动、晶体运动串联电阻(ESR)补偿、负电阻测试以及对调谐电容的需求。一个XCalibur有源谐振器可以驱动多达两个时钟输入。与传统晶体谐振器相比,XCalibur谐振器具有更好的可靠性和更好的抗冲击、振动和EMI能力。SiT1418提供业界最佳的0.1ppb/g振动灵敏度、10,000 g冲击和70 g抗振性。该进口有源晶振器件还具有宽频率范围、出色的稳定性和较短的交付周期,适合工业、医疗、汽车、航空电子和其它高温应用。非AEC-Q100汽车、航空电子设备和其他高温应用,还可以用于工业传感器、PLC、电机伺服、户外网络设备、医疗视频摄像头、资产跟踪系统等。美国Sitime晶振,SiT1418BA-21-18N -16.000000D,6G通信模块晶振.
美国Sitime晶振,SiT1418BA-21-18N -16.000000D,6G通信模块晶振参数表
Parameters | Symbol | Min. | Typ. | Max. | Unit | Condition | ||||||||
Frequency Range | ||||||||||||||
Output Frequency Range | f | 1 | – | 110 | MHz | Refer toTable 3for a list of supported frequencies | ||||||||
Frequency Stability and Aging | ||||||||||||||
Frequency Stability | F_stab | -15 | – | 15 | ppm | At 25°C | ||||||||
-20 | – | 20 | ppm | Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, | ||||||||||
-25 | – | 25 | ppm | and variations over operating temperature, rated power | ||||||||||
-30 | – | 30 | ppm | supply voltage and load | ||||||||||
-50 | – | 50 | ppm | |||||||||||
Operating TemperatureRange | ||||||||||||||
Operating Temperature | T_use | -40 | – | 105 | °C | Extended Industrial | ||||||||
Range | -40 | – | 125 | °C | Automotive | |||||||||
-40 | – | 150 | °C | Contact SiTime | ||||||||||
Supply Voltage and Current Consumption | ||||||||||||||
Supply Voltage | Vdd | 1.62 | 1.8 | 1.98 | V | |||||||||
2.25 | 2.5 | 2.75 | V | |||||||||||
2.52 | 2.8 | 3.08 | V | |||||||||||
2.7 | 3 | 3.3 | V | |||||||||||
2.97 | 3.3 | 3.63 | V | |||||||||||
2.25 | – | 3.63 | V | |||||||||||
Current Consumption | Idd | 3.8 | 4.7 | mA | No load condition, f = 20 MHz, Vdd = 2.8 V, 3.0 V or 3.3 V | |||||||||
– | 3.6 | 4.5 | mA | No load condition, f = 20 MHz, Vdd = 2.5 V | ||||||||||
– | 3.5 | 4.5 | mA | No load condition, f = 20 MHz, Vdd = 1.8 V |
Parameters | Symbol | Min. | Typ. | Max. | Unit | Condition | ||||||||||||||||||||||||||||
LVCMOS OutputCharacteristics | ||||||||||||||||||||||||||||||||||
Duty Cycle | DC | 45 | – | 55 | % | All Vdds | ||||||||||||||||||||||||||||
Rise/Fall Time | Tr, Tf | – | 1.0 | 2.0 | ns | Vdd = 2.5 V, 2.8 V,3.0 or 3.3 V, 20% - 80% | ||||||||||||||||||||||||||||
– | 1.3 | 2.5 | ns | Vdd = 1.8 V, 20% - 80% | ||||||||||||||||||||||||||||||
– | 1.0 | 3 | ns | Vdd = 2.25 V - 3.63 V, 20% - 80% | ||||||||||||||||||||||||||||||
Output High Voltage | VOH | 90% | Vdd |
IOH = -4 mA (Vdd = 3.0 V or 3.3 V) IOH = -3 mA (Vdd = 2.8 V or 2.5 V) IOH = -2 mA (Vdd = 1.8 V) |
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Output Low Voltage | VOL | – | 10% | Vdd |
IOL = 4 mA (Vdd = 3.0 V or 3.3 V) IOL = 3 mA (Vdd = 2.8 V or 2.5 V) IOL = 2 mA (Vdd = 1.8 V) |
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Startup Timing | ||||||||||||||||||||||||||||||||||
Startup Time | T_start | – | – | 5 | ms | Measured from the time Vdd reaches its rated minimum value | ||||||||||||||||||||||||||||
Jitter | ||||||||||||||||||||||||||||||||||
RMS Period Jitter | T_jitt | – | 1.6 | 2.5 | ps | f = 75 MHz, Vdd = 2.5 V, 2.8 V, 3.0 V or 3.3 V | ||||||||||||||||||||||||||||
– | 1.9 | 3 | ps | f = 75 MHz, Vdd = 1.8 V | ||||||||||||||||||||||||||||||
RMS Phase Jitter (random) | T_phj | – | 0.5 | 0.8 | ps | f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz | ||||||||||||||||||||||||||||
– | 1.3 | 2 | ps | f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz |
SMD振荡器产品特性:
没有运动系列电阻(ESR)补偿
没有负电阻测试
保证振荡器启动在所有条件下
全包频率稳定性低至±20ppm在扩展温度范围(-40°C到125°C)。
-55°C选项参考SiT1420和SiT1421
基本频率1MHz和1MHz110MHz精确到6小数位
电源电压1.8 V或2.5V3.3V
行业最好的g灵敏度0.1ppb/g
低功耗3.5 mA典型在1.8 V
LVCMOS兼容输出
行业标准包: 2.5x2.0,3.2x2.5毫米x mm
RoHS和达到兼容,无pb,无卤和无锑
AEC-Q100有源谐振器
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