SiT1408BC-12-33N-50.000000D SiTime可编程晶振 6G网络设备晶振，尺寸2.5x2.0mm，频率50MHZ，美国进口晶振，SiTime有源晶振，有源谐振器，有源晶振，四脚贴片晶振，2520mm有源谐振器，贴片谐振器，6G网络设备晶振，平板电脑晶振，电子书专用晶振，以太网晶振，智能家居晶振，低抖动有源谐振器，低功耗有源谐振器，带电压晶振，高质量晶振，具有良好的可靠性以及超高的耐压性。
SMD振荡器产品很适用于DSC、DVC、DVR、IP CAM、平板电脑、电子书、SSD、GPON、EPON等。适用于高速串行协议，如：USB:SATA、SAS、火线、100M/1G/10G以太网等。SiT1408BC-12-33N-50.000000D SiTime可编程晶振 6G网络设备晶振.
SiT1408BC-12-33N-50.000000D SiTime可编程晶振 6G网络设备晶振参数表
| Parameters | Symbol | Min. | Typ. | Max. | Unit | Condition | ||||||
| Frequency Range | ||||||||||||
| Output Frequency Range | f | 60 | MHz | |||||||||
| Frequency Stability and Aging | ||||||||||||
| Frequency Stability | F_stab | -15 | – | 15 | ppm | At 25°C | ||||||
| -20 | – | 20 | ppm | Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, | ||||||||
| -25 | – | 25 | ppm | and variations over operating temperature, rated power | ||||||||
| -50 | – | 50 | ppm | supply voltage and load. | ||||||||
| Operating TemperatureRange | ||||||||||||
| Operating Temperature | T_use | -20 | – | 70 | °C | Extended Commercial | ||||||
| Range | -40 | – | 85 | °C | Industrial | |||||||
| Supply Voltage and Current Consumption | ||||||||||||
| Supply Voltage | Vdd_ 1.8 | 1.62 | 1.8 | 1.98 | V | Contact SiTimefor 1.5 V support | ||||||
| Vdd_2.5 | 2.25 | 2.5 | 2.75 | V | ||||||||
| Vdd_2.8 | 2.52 | 2.8 | 3.08 | V | ||||||||
| Vdd_3.0 | 2.7 | 3 | 3.3 | V | ||||||||
| Vdd_3.3 | 2.97 | 3.3 | 3.63 | V | ||||||||
| Vdd_XX | 2.25 | – | 3.63 | V | ||||||||
| Vdd_YY | 1.62 | – | 3.63 | mA | ||||||||
 Current Consumption
|
Idd | – | 3.8 | 4.5 | mA | No load condition, f = 20 MHz, Vdd_2.8, Vdd_3.0, Vdd_3.3, | ||||||
| Vdd_XX, Vdd_YY | ||||||||||||
| – | 3.7 | 4.2 | mA | No load condition, f = 20 MHz, Vdd_2.5 | ||||||||
| – | 3.5 | 4.1 | mA | No load condition, f = 20 MHz, Vdd_1.8 | ||||||||
| Parameters | Symbol | Min. | Typ. | Max. | Unit | Condition | ||||||||||||||||||||||||||||
| LVCMOS Output Characteristics | ||||||||||||||||||||||||||||||||||
| Duty Cycle | DC | 45 | – | 55 | % | All Vdd levels | ||||||||||||||||||||||||||||
| Rise/Fall Time | Tr, Tf | – | 1 | 2 | ns | 20% - 80% Vdd_2.5, Vdd_2.8, Vdd__3.0, Vdd_3.3 | ||||||||||||||||||||||||||||
| – | 1.3 | 2.5 | ns | 20% - 80% Vdd_1.8 | ||||||||||||||||||||||||||||||
| – | 2 | ns | 20% - 80% Vdd_XX | |||||||||||||||||||||||||||||||
| – | – | 2.7 | ns | 20% - 80% Vdd_YY | ||||||||||||||||||||||||||||||
| Output High Voltage | VOH | 90% | Vdd |
IOH = -4 mA (Vdd__3.0 and Vdd__3.3) IOH = -3 mA (Vdd__2.8 and Vdd_2.5) IOH = -2 mA (Vdd__1.8) |
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| Output Low Voltage | VOL | – | – | 10% | Vdd |
IOL = 4 mA (Vdd__3.0 and Vdd__3.3) IOL = 3 mA (Vdd__2.8 and Vdd_2.5) IOL = 2 mA (Vdd__1.8) |
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| Startup Timing | ||||||||||||||||||||||||||||||||||
| Startup Time | T_start | – | – | 5 | ms | Measured from the time Vdd reaches its rated minimum value | ||||||||||||||||||||||||||||
| Jitter | ||||||||||||||||||||||||||||||||||
| RMS Period Jitter | T_jitt | – | 1.8 | 3 | ps |
f = 75 MHz, Vdd_ 1.8, Vdd__2.5, Vdd_2.8, Vdd__3.0, Vdd__3.3, Vdd_XX, |
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| – | – | 3.3 | ps | f = 75 MHz, Vdd_YY | ||||||||||||||||||||||||||||||
| RMS Phase Jitter (random) | T_phj | – | 0.5 | 0.9 | ps |
f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz. Vdd_ 1.8, Vdd_2.5, Vdd_2.8, Vdd__3.0, Vdd__3.3, Vdd_XX |
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| – | 1.3 | 2 | ps |
f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz. Vdd_ 1.8, Vdd_2.5, Vdd_2.8, Vdd__3.0, Vdd__3.3, Vdd_XX |
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| – | 1.4 | ps |
f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz. Vdd_YY |
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| – | 2.3 | ps | f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz. Vdd_YY | |||||||||||||||||||||||||||||||
SiT1408BC-12-33N-50.000000D SiTime可编程晶振 6G网络设备晶振 尺寸图
有源晶振产品特性：
没有负载电容器需要
没有运动系列电阻（ESR）补偿
没有负电阻测试
保证振荡器启动在所有条件下，
一个主动谐振器可以驱动两个时钟输入
全包频率稳定性低至±20 ppm在扩展温度范围（-40°C到85°C）。
参考SiT1418和SiT1420高温选项
低功耗3.5 mA典型在1.8 V
LVCMOS兼容输出
行业标准包： 2.5 x 2.0,3.2 x 2.5 mm x mm
RoHS，达到兼容、无铅、无卤和锑
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